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Silicon carbide technology parameter



  • Direct bonding SiC Compact SiC
    W(F.C)% ≤1 ≤1
    W(Fe2O3 ≤0.2 ≤0.2
    Pressure resisting(mpa) ≥229 ≥300
    Bending strength(mpa) ≥50 ≥60
    1400℃ bending strength(mpa) ≥60 ≥70
    Bulk density(g/cm3) ≥2.71 ≥3.4
    Apparent porosity(%) ≤15 ≤1.5
    1000℃ thermal conductive ≥27 ≥45

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